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ZXMN2A01FTA - MOSFET N-Channel 20V 1.9A SOT-23-3

Diodes Incorporated

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SKU:
010-ZXMN2A01FTA
MPN:
ZXMN2A01FTA
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 26.63
10 - 99
₹ 23.97
100 - 999
₹ 22.64
1000 or above
₹ 21.30
ZXMN2A01FTA is a 20V, 1.9A N-Channel Power MOSFET by Diodes Incorporated with ultra-low RDS(on), fast switching, and low gate charge in a compact SOT-23-3 package. Ideal for DC-DC converters, load switching, and efficient power management systems. View full description
  • 100% Original Products
  • GST Invoice
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₹31.42 inc. GST
₹26.63 ex. GST
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
1.9 A
Current Rating:
2.09 A
Drain To Source Breakdown Voltage:
20 V
Drain To Source Resistance:
120 milliohm
Drain To Source Voltage (Vdss):
20 V
Element Configuration:
Single
Fall Time:
5.21 ns
Gate To Source Voltage (Vgs):
12 V
Input Capacitance:
303 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
806 mW
Min Breakdown Voltage:
20 V
Min Operating Temperature:
-55 C
Number Of Channels:
1
Rds On Max:
120 milliohm
Rise Time:
5.21 ns
Voltage Rating (DC):
20 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

ZXMN2A01FTA - N-Channel Power MOSFET | 20V, 1.9A, 1W | SOT-23-3 Package

The ZXMN2A01FTA from Diodes Incorporated is a new-generation N-Channel enhancement mode Power MOSFET designed for high-efficiency power management, load switching, and DC-DC conversion applications. Engineered using advanced MOSFET technology, it delivers ultra-low on-resistance (R DS(on)), fast switching capability, and low gate charge for excellent energy efficiency and thermal performance. With a drain-source voltage (V DS) of 20V, a continuous drain current of 1.9A, and power dissipation up to 1W, the ZXMN2A01FTA ensures reliable performance and compact design integration in modern portable and consumer electronic devices.

Key Features

  • Type: N-Channel enhancement mode Power MOSFET
  • Voltage Rating: 20V drain-to-source voltage (V DS)
  • Current Rating: 1.9A continuous drain current
  • Power Dissipation: Up to 1W for enhanced thermal efficiency
  • Low On-Resistance (R DS(on)): Reduces conduction losses for improved energy efficiency
  • Fast Switching Speed: Enables high-frequency operation and quick signal transitions
  • Low Gate Charge (Q g): Improves switching efficiency and reduces driver losses
  • Low Input Capacitance: Enhances responsiveness in high-speed switching circuits
  • Low Leakage Current: Ensures stable performance in low-power systems
  • Package Type: Compact SOT-23-3 surface-mount package for space-constrained designs.