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STPSC406D - 600V 4A Power Schottky Silicon Carbide Diode 2Pin TO-220AC

STMicroelectronics

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SKU:
033-STPSC406D
MPN:
STPSC406D
Quantity
Unit Price (ex. GST)
1 - 9
₹ 61.00
10 - 99
₹ 51.85
100 or above
₹ 42.70
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Technical Specifications

Brand:
STMicroelectronics
Case/Package:
TO-220
Mount:
Through Hole
Number of pins:
2
Average Rectified Current:
4 A
Element Configuration:
Single
Forward Current:
4 A
Forward Voltage:
1.9 V
Max Operating Temperature:
175 C
Max Repetitive Reverse Voltage (Vrrm):
600 V
Max Reverse Leakage Current:
50 uA
Max Reverse Voltage (DC):
600 V
Max Surge Current:
14 A
Min Operating Temperature:
-40 C
Peak Non-Repetitive Surge Current:
40 A
Peak Reverse Current:
50 uA
Reverse Recovery Time:
0 s

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Resources
Datasheet