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SI2318CDS-T1-GE3 - MOSFET N-Channel 40V 5.6A SOT-23-3

Vishay Semiconductors

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SKU:
037-Si2318CDS-T1-GE3
MPN:
Si2318CDS-T1-GE3
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 17.55
10 - 99
₹ 15.79
100 - 999
₹ 14.92
1000 or above
₹ 14.04
Si2318CDS-T1-GE3 is a 40V, 5.6A N-Channel Power MOSFET by Vishay Siliconix featuring low RDS(on), fast switching, and low gate charge in a compact SOT-23-3 package. Ideal for DC-DC converters, load switching, and power management systems. View full description
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₹17.55 ex. GST
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Technical Specifications

Brand:
Vishay Semiconductors
Case/Package:
SOT-23
Number of Pins:
3
Continuous Drain Current (ID):
5.6 A
Drain To Source Breakdown Voltage:
40 V
Drain To Source Resistance:
42 Milliohm
Drain To Source Voltage (Vdss):
40 V
Element Configuration:
Single
Fall Time:
8 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
340 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
2.1 W
Min Breakdown Voltage:
40 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.2 V
Number of Channels:
1
Power Dissipation:
1.25 W
Resistance:
42 Milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

Si2318CDS-T1-GE3 - N-Channel Power MOSFET | 40V, 5.6A, 1.25W | SOT-23-3 Package

The Si2318CDS-T1-GE3 from Vishay Siliconix is a high-efficiency N-Channel enhancement mode Power MOSFET designed for compact, high-performance power management, load switching, and DC-DC conversion applications. Utilizing Vishay’s advanced trench technology, this device delivers exceptionally low on-resistance (R DS(on)), fast switching performance, and low gate charge for superior energy efficiency. With a drain-source voltage (V DS) of 40V, a continuous drain current of 5.6A, and power dissipation up to 1.25W, the Si2318CDS-T1-GE3 provides excellent thermal and electrical performance in a compact SOT-23-3 surface-mount package.

Key Features

  • Type: N-Channel enhancement mode Power MOSFET
  • Voltage Rating: 40V drain-to-source voltage (V DS)
  • Current Rating: 5.6A continuous drain current
  • Power Dissipation: Up to 1.25W for effective heat management
  • Low On-Resistance (R DS(on)): Reduces conduction losses for higher efficiency
  • Low Gate Charge (Q g): Enables fast, energy-efficient switching
  • Fast Switching Speed: Ideal for high-frequency operation in power circuits
  • Low Input Capacitance: Minimizes switching losses and enhances response time
  • Low Input/Output Leakage: Ensures stable operation in low-power conditions
  • Package Type: Compact SOT-23-3 surface-mount design for space-constrained boards