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SI2304DDS-T1-GE3 - MOSFET N-Channel 30V 3.3A SOT-23-3

Vishay Semiconductors

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SKU:
037-SI2304DDS-T1-GE3
MPN:
SI2304DDS-T1-GE3
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 11.91
10 - 99
₹ 10.72
100 - 999
₹ 10.12
1000 or above
₹ 9.53
SI2304DDS-T1-GE3 is a 30V, 3.3A N-channel Power MOSFET from Vishay Siliconix featuring low Rds(on), fast switching, and high efficiency in a compact SOT-23-3 package for power management and switching applications. View full description
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₹14.05 inc. GST
₹11.91 ex. GST
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Technical Specifications

Brand:
Vishay Semiconductors
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
3.3 A
Drain To Source Breakdown Voltage:
30 V
Drain To Source Resistance:
60 milliohm
Drain To Source Voltage (Vdss):
30 V
Element Configuration:
Single
Fall Time:
22 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
35 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
1.7 W
Min Breakdown Voltage:
30 V
Min Operating Temperature:
-50 C
Nominal Vgs:
2.2 V
Number of Channels:
1
Power Dissipation:
1.1 W
Resistance:
60 milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

SI2304DDS-T1-GE3 – 30V N-Channel Power MOSFET (SOT-23-3 Package)

The SI2304DDS-T1-GE3 from Vishay Siliconix is a compact and efficient N-channel Power MOSFET designed for low-voltage switching and power management applications. Featuring a drain-source voltage rating of 30V and a continuous drain current of 3.3A, this device delivers excellent performance in compact circuit designs. With its low R DS(on), fast switching speed, and high efficiency, it is ideal for DC-DC converters, load switches, power supplies, and battery-powered devices. The SOT-23-3 surface-mount package allows for high-density PCB layouts, making it a preferred choice for modern electronic designs requiring compact yet powerful components.

Key Features

  • Drain-Source Voltage (V DS): 30V
  • Continuous Drain Current (I D): 3.3A for efficient power handling
  • Low On-Resistance (R DS(on)): Reduces conduction losses and enhances efficiency
  • High-Speed Switching: Optimised for low gate charge and fast response times
  • Compact SOT-23-3 Package: Space-saving design suitable for portable and compact devices
  • Low Gate Threshold Voltage: Enables operation with logic-level control signals
  • Enhanced Thermal Stability: Ensures consistent performance under varying load conditions
  • Applications: Ideal for DC-DC converters, battery management systems, power switches, and motor drivers