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PMV40UN2R - MOSFET N-Channel 30V 3.7A SOT-23-3

Nexperia

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SKU:
156-PMV40UN2R
MPN:
PMV40UN2R
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 11.49
10 - 99
₹ 10.34
100 - 999
₹ 9.77
1000 or above
₹ 9.19
PMV40UN2R is a 30V, 3.7A N-Channel MOSFET by Nexperia featuring trench MOSFET technology, low threshold voltage, fast switching, and 1W power dissipation in a compact SOT-23-3 package. Ideal for power management and load switching. View full description
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₹11.49 ex. GST
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Technical Specifications

Brand:
Nexperia
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Ambient Temperature Range High:
150 C
Continuous Drain Current (ID):
3.7 A
Drain To Source Breakdown Voltage:
30 V
Drain To Source Resistance:
44 Milliohm
Drain To Source Voltage (Vdss):
30 V
Gate To Source Voltage (Vgs):
12 V
Input Capacitance:
635 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
5 W
Min Breakdown Voltage:
30 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
490 mW
Resistance:
36 Milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

PMV40UN2R - N-Channel MOSFET | 30V, 3.7A, 1W | SOT-23-3 Package

The PMV40UN2R from Nexperia is a high-performance N-Channel enhancement mode MOSFET utilizing advanced trench MOSFET technology to deliver superior switching performance, low on-resistance, and enhanced power efficiency. With a drain-source voltage (V DS) of 30V, a continuous drain current of 3.7A, and an enhanced power dissipation of up to 1000mW, this device is ideal for high-efficiency load switching, DC-DC conversion, and power management applications. Designed with a low gate threshold voltage and fast switching capability, it ensures minimal power loss and reliable operation in compact electronic systems. The SOT-23-3 surface-mount package makes it perfect for space-constrained and portable applications.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 30V drain-to-source voltage (V DS)
  • Current Rating: 3.7A continuous drain current
  • Power Dissipation: Up to 1000mW (1W) for efficient thermal handling
  • Technology: Advanced Trench MOSFET process for low R DS(on) and high efficiency
  • Low Threshold Voltage: Enables direct logic-level operation for ease of control
  • Fast Switching Speed: Ensures efficient high-frequency operation with minimal switching losses
  • Low Input Capacitance: Optimized for fast and efficient switching performance
  • Package Type: Compact SOT-23-3 package suitable for high-density PCB layouts
  • Environmental Compliance:
    • Lead-Free and RoHS Compliant

    • Halogen-Free and Green Device