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PMF170XP,115 - MOSFET P-Channel 20V 1A SOT-323-3

Nexperia

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SKU:
156-PMF170XP115
MPN:
PMF170XP,115
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
PMF170XP,115 P-Channel MOSFET -20V -1A SOT-323 SC-70 Package by Nexperia
Quantity
Unit Price (ex. GST)
1 - 9
₹ 7.61
10 - 99
₹ 6.85
100 - 999
₹ 6.47
1000 or above
₹ 6.09
PMF170XP,115 is a -20V, -1A P-Channel MOSFET by Nexperia featuring low RDS(on), trench MOSFET technology, and fast switching in a compact SOT-323 (SC-70) package. Ideal for relay drivers, high-side switches, and power management circuits. View full description
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Technical Specifications

Brand:
Nexperia
Case/Package:
SOT-323
Number of Pins:
3
Continuous Drain Current (ID):
1 A
Drain To Source Resistance:
300 milliohm
Max Operating Temperature:
150 C
Max Power Dissipation:
360 mW
Min Breakdown Voltage:
20 V
Full Reel Quantity:
3000

Warranty Information

PMF170XP,115, P-Channel MOSFET, -20V MOSFET, Nexperia MOSFET, SOT-323 transistor, SC-70 MOSFET, trench MOSFET, low RDSon MOSFET, high-side switch MOSFET, fast switching MOSFET, relay driver MOSFET, power management MOSFET

Description

Resources:

Datasheet

PMF170XP,115 - P-Channel MOSFET | -20V, -1A, 0.38W | SOT-323 (SC-70) Package

The PMF170XP,115 from Nexperia is a compact and efficient P-Channel enhancement mode MOSFET designed using advanced trench MOSFET technology for superior switching performance, low on-resistance, and reliable power handling. With a drain-source voltage (V DS) of -20V, a continuous drain current of -1A, and a power dissipation of 0.38W, this device offers excellent electrical efficiency in space-constrained designs. Its fast switching speed, low R DS(on), and small SOT-323 (SC-70) package make it an ideal solution for relay driving, high-speed line driving, and high-side load switching in compact electronic systems.

Key Features

  • Type: P-Channel enhancement mode MOSFET
  • Voltage Rating: −20V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of −1A
  • Power Dissipation: 0.38W for compact thermal performance
  • Low On-Resistance (R DS(on)): Reduces conduction losses and enhances efficiency
  • Fast Switching Speed: Ideal for high-speed and low-voltage switching circuits
  • Trench MOSFET Technology: Provides superior current handling and low gate charge
  • Compact Package: SOT-323 (SC-70) surface-mount package for space-saving PCB layouts
  • Low Gate Drive Requirements: Compatible with logic-level control signals

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