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MMBT5551-7-F - Bipolar Transistor NPN 160V 600mA 300MHz SOT-23-3

Diodes Incorporated

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SKU:
010-MMBT5551-7-F
MPN:
MMBT5551-7-F
Quantity
Unit Price (ex. GST)
1 - 9
₹ 4.91
10 - 99
₹ 4.42
100 or above
₹ 3.93
NPN bipolar transistor with 160 volt rating 600 milliampere current capability and very high speed performance suitable for high voltage switching and signal amplification in compact surface mount circuits View full description
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₹4.91 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Number of Terminals:
3
Weight:
7.994566 mg
Collector Base Voltage (VCBO):
180 V
Collector Emitter Breakdown Voltage:
160 V
Collector Emitter Saturation Voltage:
200 mV
Collector Emitter Voltage (VCEO):
160 V
Continuous Collector Current:
200 mA
Current Rating:
200 mA
Element Configuration:
Single
Emitter Base Voltage (VEBO):
6 V
Frequency:
300 MHz
Gain Bandwidth Product:
300 MHz
hFE Min:
30
Max Breakdown Voltage:
160 V
Max Collector Current:
200 mA
Max Frequency:
300 MHz
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Military Standard:
MIL-STD-202
Min Operating Temperature:
-55 C
Number of Elements:
1
Packaging:
Cut Tape
Polarity:
NPN
Power Dissipation:
300 mW
Transition Frequency:
100 MHz
Voltage Rating (DC):
160 V
Height:
1.1 mm
Length:
3.05 mm
Width:
1.4 mm

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

High Voltage NPN Bipolar Transistor for High Speed Switching and Signal Amplification Circuits

The MMBT5551 7 F NPN bipolar transistor is designed for applications that require high voltage tolerance combined with fast switching performance. With a collector emitter voltage rating of 160 volt and a collector current capability of 600 milliampere this transistor delivers stable operation in driver stages signal amplification circuits and high voltage control designs. The compact SOT 23 package supports space efficient PCB layouts in modern surface mount electronics.

This transistor is commonly used in high voltage interface circuits fast switching stages amplification blocks and industrial control electronics. Its very high transition frequency enables rapid signal response while maintaining reliable electrical characteristics. The MMBT5551 7 F is well suited for embedded systems communication equipment and power control applications where speed and voltage margin are critical.

Key Features

  • NPN Bipolar Transistor
    Suitable for high voltage switching and signal amplification applications
  • Very High Voltage Capability
    Designed for circuits operating up to 160 volt
  • High Speed Performance
    Supports fast signal transitions in control and amplification circuits
  • High Collector Current Capability
    Handles load currents up to 600 milliampere
  • Compact SOT 23 Package
    Ideal for high density surface mount PCB designs