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FDV301N - N-Channel Digital FET 25V 0.22A 4Ohm SMD SOT-23-3

ON Semiconductor

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SKU:
042-FDV301N
MPN:
FDV301N
Quantity
Unit Price (ex. GST)
1 - 9
₹ 3.90
10 - 99
₹ 3.31
100 or above
₹ 2.73
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Technical Specifications

Brand:
ON Semiconductor
Case/Package:
SOT-23
Continuous Drain Current (ID):
220 mA
Mount:
Surface Mount
Number of Pins:
3
Drain to Source Breakdown Voltage:
25 V
Min Operating Temperature:
-55 C
Max Operating Temperature:
150 C
Input Capacitance:
9.5 pF
Drain to Source Resistance:
5 Ohm
Voltage Rating (DC):
25 V
RoHS:
Compliant
Polarity:
N-Channel
Drain to Source Voltage (Vdss):
25 V
Gate to Source Voltage (Vgs):
8 V

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

This N-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Resources
Datasheet