Name: DMP3085LSD-13 - MOSFET 2P-Channel 30V 3.9A SO-8
Brand: Diodes Incorporated
SKU: 010-DMP3085LSD-13
Price: 30.95 INR
Availability: InStock

Technical Specifications

Brand:

Diodes Incorporated

Case/Package:

Mount:

Surface Mount

Number of Pins:

Continuous Drain Current (ID):

3.9 A

Drain To Source Breakdown Voltage:

-30 V

Drain To Source Resistance:

70 milliohm

Drain To Source Voltage (Vdss):

-30 V

Fall Time:

14.6 ns

Gate To Source Voltage (Vgs):

20 V

Input Capacitance:

563 pF

Max Junction Temperature (Tj):

150 C

Max Operating Temperature:

150 C

Max Power Dissipation:

1.7 W

Min Breakdown Voltage:

30 V

Min Operating Temperature:

-55 C

Number of Channels:

Power Dissipation:

1.1 W

Rds On Max:

70 milliohm

Rise Time:

5 ns

Full Reel Quantity:

2500

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMP3085LSD-13 - Dual P-Channel Power MOSFET | -30V, -3.9A, 1.4W per Channel | SO-8 Package

The DMP3085LSD-13 from Diodes Incorporated is a high-performance dual P-Channel enhancement mode Power MOSFET designed for high-efficiency power management, load switching, and DC-DC conversion applications. Utilizing advanced trench MOSFET technology, this device delivers ultra-low on-resistance (R DS(on)), fast switching speed, and low gate charge, ensuring minimal power loss and exceptional thermal efficiency. Each channel supports a drain-source voltage (V DS) of -30V, a continuous drain current of -3.9A, and power dissipation up to 1.4W, making it suitable for compact, high-current switching systems. The SO-8 package provides excellent heat dissipation and ease of integration for a variety of consumer, industrial, and computing applications.

Key Features

Type: Dual P-Channel enhancement mode Power MOSFET
Voltage Rating: −30V drain-to-source voltage (V DS)
Current Rating: −3.9A continuous drain current per channel
Power Dissipation: Up to 1.4W per channel for efficient thermal performance
Low On-Resistance (R DS(on)): Reduces conduction losses and enhances system efficiency
Fast Switching Speed: Enables efficient operation in high-frequency applications
Low Gate Charge (Q g): Ensures low drive losses and high-speed performance
Low Input Capacitance: Optimized for high-speed switching
Low Input/Output Leakage: Provides stable, low-power standby performance
Package Type: Compact SO-8 surface-mount package with superior thermal handling.