null

DMP2120U-7 - MOSFET P-Channel 20V 3.8A SOT-23-3

Diodes Incorporated

No reviews yet Write a Review
SKU:
010-DMP2120U-7
MPN:
DMP2120U-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 10.46
10 - 99
₹ 9.41
100 - 999
₹ 8.89
1000 or above
₹ 8.37
DMP2120U-7 is a -20V, -3.8A P-Channel Power MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, and low capacitance in a compact SOT-23-3 package. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹12.34 inc. GST
₹10.46 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23-3
Number Of Pins:
3
Continuous Drain Current (ID):
3.8 A
Drain To Source Breakdown Voltage:
-20 V
Drain To Source Resistance:
62 milliohm
Drain To Source Voltage (Vdss):
-20 V
Gate To Source Voltage (Vgs):
8 V
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
1.3 W
Min Breakdown Voltage:
20 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMP2120U-7 - P-Channel Power MOSFET | -20V, -3.8A, 1.25W | SOT-23-3 Package

The DMP2120U-7 from Diodes Incorporated is a high-efficiency P-Channel enhancement mode Power MOSFET designed for power management, battery charging, and DC-DC converter applications. Engineered using advanced trench MOSFET technology, this device provides low on-state resistance (R DS(on)), fast switching performance, and low input capacitance, ensuring minimal power loss and superior energy efficiency. With a drain-source voltage (V DS) of -20V, a continuous drain current of -3.8A, and power dissipation up to 1.25W, it offers robust performance in a compact SOT-23-3 surface-mount package, making it ideal for modern, high-density electronic designs.

Key Features

  • Type: P-Channel enhancement mode Power MOSFET
  • Voltage Rating: −20V drain-to-source voltage (V DS)
  • Current Rating: −3.8A continuous drain current
  • Power Dissipation: Up to 1.25W for improved thermal efficiency
  • Low On-Resistance (R DS(on)): Reduces conduction losses and enhances system efficiency
  • Fast Switching Speed: Enables high-frequency operation for efficient power conversion
  • Low Input Capacitance: Improves signal response and minimizes switching losses
  • Low Input/Output Leakage: Ensures stable operation and minimal power drain in standby modes
  • Package Type: Compact SOT-23-3 for efficient use of PCB space.