null

DMN3404L-7 - MOSFET N-Channel 30V 5.8A SOT-23-3

Diodes Incorporated

No reviews yet Write a Review
SKU:
010-DMN3404L-7
MPN:
DMN3404L-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 8.66
10 - 99
₹ 7.79
100 - 999
₹ 7.36
1000 or above
₹ 6.93
DMN3404L-7 is a 30V, 5.8A N-Channel Power MOSFET by Diodes Incorporated featuring ultra-low RDS(on), fast switching, and low input capacitance in a compact SOT-23-3 package. Ideal for DC-DC converters, load switching, and power management. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹10.22 inc. GST
₹8.66 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
2 A
Drain To Source Breakdown Voltage:
30 V
Drain To Source Resistance:
28 Milliohm
Drain To Source Voltage (Vdss):
30 V
Element Configuration:
Single
Fall Time:
6.18 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
386 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
1.4 W
Military Standard:
MIL-STD-202
Min Breakdown Voltage:
30 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.5 V
Number of Channels:
1
Power Dissipation:
720 mW
Resistance:
28 milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMN3404L-7 - N-Channel Power MOSFET | 30V, 5.8A, 1.4W | SOT-23-3 Package

The DMN3404L-7 from Diodes Incorporated is a high-efficiency N-Channel enhancement mode Power MOSFET designed using advanced trench technology to achieve ultra-low on-resistance (R DS(on)) while maintaining fast switching performance. With a drain-source voltage (V DS) of 30V, a continuous drain current of 5.8A, and power dissipation up to 1.4W, this compact SOT-23-3 device is ideal for high-efficiency power management, DC-DC converters, and load switching applications. Its combination of low capacitance, low leakage, and high-speed operation ensures reliable performance in compact, energy-sensitive designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 30V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 5.8A
  • Power Dissipation: Up to 1.4W for efficient heat management
  • Low On-Resistance (R DS(on)): Minimizes conduction losses and improves efficiency
  • Low Input Capacitance: Enhances switching speed and efficiency
  • Fast Switching Speed: Ideal for high-frequency operation and efficient power conversion
  • Low Input/Output Leakage: Provides stable and energy-efficient operation
  • Package Type: Compact SOT-23-3 surface-mount package suitable for dense PCB designs