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DMN3067LW-7 - MOSFET N-Channel 30V 2.6A SOT-323-3

Diodes Incorporated

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SKU:
010-DMN3067LW-7
MPN:
DMN3067LW-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 10.77
10 - 99
₹ 9.69
100 - 999
₹ 9.15
1000 or above
₹ 8.62
DMN3067LW-7 is a 30V, 2.6A N-Channel MOSFET by Diodes Incorporated featuring ultra-low RDS(on), fast switching, and low input capacitance in a compact SOT-323 (SC-70) package. Ideal for DC-DC converters and power management applications. View full description
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₹10.77 ex. GST
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-323
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
2.6 A
Drain To Source Resistance:
980 milliohm
Drain To Source Voltage (Vdss):
30 V
Element Configuration:
Single
Fall Time:
6.1 ns
Gate To Source Voltage (Vgs):
12 V
Input Capacitance:
447 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
500 mW
Min Breakdown Voltage:
30 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
1.1 W
Rise Time:
5.2 ns
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMN3067LW-7 - N-Channel MOSFET | 30V, 2.6A, 850mW | SOT-323 (SC-70) Package

The DMN3067LW-7 from Diodes Incorporated is a compact and efficient N-Channel enhancement mode MOSFET engineered for high-efficiency power management and load switching applications. Utilizing advanced MOSFET technology, it offers ultra-low on-resistance (R DS(on)), fast switching performance, and low input capacitance, ensuring reduced power losses and excellent system efficiency. With a drain-source voltage (V DS) of 30V, a continuous drain current of 2.6A, and power dissipation up to 850mW, this small-form-factor MOSFET provides reliable performance in portable and space-constrained electronic designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 30V drain-to-source voltage (V DS)
  • Current Rating: 2.6A continuous drain current
  • Power Dissipation: Up to 850mW for efficient thermal management
  • Low On-Resistance (R DS(on)): Minimizes conduction losses, improving power efficiency
  • Fast Switching Speed: Enables high-frequency operation for advanced power circuits
  • Low Input Capacitance: Reduces gate drive power and switching losses
  • Low Gate Threshold Voltage: Ensures easy logic-level drive compatibility
  • Package Type: Compact SOT-323 (SC-70) for high-density PCB layouts