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DMG3402L-7 - MOSFET N-Channel 30V 4A SOT-23-3

Diodes Incorporated

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SKU:
010-DMG3402L-7
MPN:
DMG3402L-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
DMG3402L-7 N-Channel Power MOSFET 30V 4A SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 9.23
10 - 99
₹ 8.31
100 - 999
₹ 7.85
1000 or above
₹ 7.38
DMG3402L-7 is a 30V, 4A N-Channel Power MOSFET by Diodes Incorporated featuring ultra-low RDS(on), fast switching, and low gate charge in a compact SOT-23-3 package. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23-3
Mount:
Surface Mount
Number Of Pins:
3
Continuous Drain Current (ID):
4 A
Drain To Source Breakdown Voltage:
30 V
Drain To Source Resistance:
52 milliohm
Drain To Source Voltage (Vdss):
30 V
Element Configuration:
Single
Fall Time:
2 ns
Gate To Source Voltage (Vgs):
12 V
Input Capacitance:
464 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
1.4 W
Min Breakdown Voltage:
30 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Rds On Max:
52 milliohm
Rise Time:
1.6 ns
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMG3402L-7 - N-Channel Power MOSFET | 30V, 4A, 1.4W | SOT-23-3 Package

The DMG3402L-7 from Diodes Incorporated is a high-efficiency N-Channel enhancement mode Power MOSFET designed for power management, load switching, and DC-DC conversion applications. Engineered using advanced trench MOSFET technology, this device delivers very low on-resistance (R DS(on)), fast switching speed, and low gate charge, ensuring exceptional power efficiency and reliability. With a drain-source voltage (V DS) of 30V, a continuous drain current of 4A, and power dissipation up to 1.4W, the DMG3402L-7 offers excellent electrical performance and thermal efficiency in a compact SOT-23-3 surface-mount package — ideal for high-density circuit designs.

Key Features

  • Type: N-Channel enhancement mode Power MOSFET
  • Voltage Rating: 30V drain-to-source voltage (V DS)
  • Current Rating: 4A continuous drain current
  • Power Dissipation: 1.4W maximum for efficient thermal management
  • Low On-Resistance (R DS(on)): Reduces power loss and enhances switching efficiency
  • Fast Switching Speed: Enables use in high-frequency power applications
  • Low Gate Charge (Q g): Ensures minimal drive power and higher switching efficiency
  • Low Input Capacitance: Ideal for rapid signal transitions and responsive control
  • Low Leakage Current: Enhances circuit stability and minimizes standby losses
  • Package Type: Compact SOT-23-3 for space-saving PCB layouts.

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