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DMG2305UX-7 - MOSFET P-Channel 20V 4.2A SOT-23-3

Diodes Incorporated

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SKU:
010-DMG2305UX-7
MPN:
DMG2305UX-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
DMG2305UX-7 P-Channel MOSFET -20V -4.2A SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 8.00
10 - 99
₹ 7.20
100 - 999
₹ 6.80
1000 or above
₹ 6.40
DMG2305UX-7 is a -20V, -4.2A P-Channel MOSFET by Diodes Incorporated with low RDS(on), fast switching, and logic-level gate drive in a compact SOT-23-3 package. Ideal for DC-DC converters, load switching, and power management applications. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
4.2 A
Drain To Source Breakdown Voltage:
-20 V
Drain To Source Resistance:
52 Milliohm
Drain To Source Voltage (Vdss):
-20 V
Element Configuration:
Single
Fall Time:
34.7 ns
Gate To Source Voltage (Vgs):
8 V
Input Capacitance:
808 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
1.4 W
Min Breakdown Voltage:
20 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
1.4 W
Resistance:
52 Milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMG2305UX-7 - P-Channel MOSFET | -20V, -4.2A | SOT-23-3 Package

The DMG2305UX-7 from Diodes Incorporated is a high-performance P-Channel enhancement mode MOSFET designed using advanced trench technology to deliver low on-resistance (R DS(on)), high-speed switching, and efficient power handling. With a drain-source voltage (V DS) of -20V, a continuous drain current of -4.2A, and power dissipation up to 1.4W, this compact SOT-23-3 device is ideal for DC-DC converters, load switching, and battery management applications. The MOSFET combines low gate threshold voltage with fast switching performance, making it perfect for high-efficiency and low-voltage power management systems.

Key Features

  • Type: P-Channel enhancement mode MOSFET
  • Voltage Rating: −20V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of −4.2A
  • Power Dissipation: Up to 1.4W for effective heat management
  • Low On-Resistance (R DS(on)): Minimizes conduction losses and enhances efficiency
  • Low Gate Threshold Voltage: Suitable for direct logic-level control in low-voltage circuits
  • Fast Switching Speed: Ensures high performance in switching and power management applications
  • Low Input Capacitance: Improves switching efficiency and reduces power loss
  • Low Leakage Current: Provides stable operation in low-power or standby modes
  • Package Type: Compact SOT-23-3 surface-mount package for dense PCB layouts

  • Environmental Compliance:

    • Fully Lead-Free and RoHS Compliant

    • Halogen-Free and Antimony-Free (Green Device)

  • Reliability: Qualified to JEDEC standards for robust operation across industrial environments

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