null

DMG2301L-7 - MOSFET P-Channel 20V 3A SOT-23-3

Diodes Incorporated

No reviews yet Write a Review
SKU:
010-DMG2301L-7
MPN:
DMG2301L-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
DMG2301L-7 P-Channel Power MOSFET -20V -3A SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 8.32
10 - 99
₹ 7.49
100 - 999
₹ 7.07
1000 or above
₹ 6.66
DMG2301L-7 is a -20V, -3A P-Channel Power MOSFET by Diodes Incorporated featuring low RDS(on), low capacitance, and fast switching in a compact SOT-23-3 package. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹9.82 inc. GST
₹8.32 ex. GST
17 people looking at this.

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23-3
Mount:
Surface Mount
Number Of Pins:
3
Continuous Drain Current (ID):
3 A
Drain To Source Breakdown Voltage:
-20 V
Drain To Source Resistance:
120 milliohm
Drain To Source Voltage (Vdss):
-20 V
Gate To Source Voltage (Vgs):
8 V
Input Capacitance:
476 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
1.5 W
Min Breakdown Voltage:
20 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
1.5 W
Rds On Max:
120 milliohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMG2301L-7 - P-Channel Power MOSFET | -20V, -3A, 1.25W | SOT-23-3 Package

The DMG2301L-7 from Diodes Incorporated is a high-efficiency P-Channel enhancement mode Power MOSFET engineered for power management, motor control, and backlighting applications. Developed using advanced trench MOSFET technology, it combines low on-state resistance (R DS(on)), fast switching speed, and low input capacitance to achieve outstanding performance and power efficiency. With a drain-source voltage (V DS) of -20V, a continuous drain current of -3A, and power dissipation up to 1.25W, this compact MOSFET offers high current handling and excellent thermal performance in a SOT-23-3 surface-mount package, ideal for space-constrained and portable electronic designs.

Key Features

  • Type: P-Channel enhancement mode Power MOSFET
  • Voltage Rating: −20V drain-to-source voltage (V DS)
  • Current Rating: −3A continuous drain current
  • Power Dissipation: Up to 1.25W for superior thermal reliability
  • Low On-Resistance (R DS(on)): Reduces conduction losses and improves energy efficiency
  • Low Input Capacitance: Enhances high-speed performance and reduces power loss
  • Fast Switching Speed: Suitable for high-frequency and low-voltage switching applications
  • Low Input/Output Leakage: Ensures stability and low standby power consumption
  • Package Type: Compact SOT-23-3 for space-saving designs and efficient heat dissipation.

Related Products