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BC847C-7-F - Bipolar Transistor NPN 45V 100mA 300MHz SOT-23-3

Diodes Incorporated

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SKU:
010-BC847C-7-F
MPN:
BC847C-7-F
Quantity
Unit Price (ex. GST)
1 - 9
₹ 4.27
10 - 99
₹ 3.84
100 or above
₹ 3.42
NPN bipolar transistor with 45 volt rating and 100 milliampere current capability high gain class C suitable for low noise high frequency signal amplification in compact surface mount circuits View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Contact Plating:
Tin
Mount:
Surface Mount
Number of Pins:
3
Number of Terminals:
3
Weight:
7.994566 mg
Collector Base Voltage (VCBO):
50 V
Collector Emitter Breakdown Voltage:
45 V
Collector Emitter Saturation Voltage:
600 mV
Collector Emitter Voltage (VCEO):
45 V
Current Rating:
100 mA
Element Configuration:
Single
Emitter Base Voltage (VEBO):
6 V
Frequency300 MHz:
300 MHz
Gain Bandwidth Product:
300 MHz
hFE Min:
420
Max Breakdown Voltage:
45 V
Max Collector Current:
100 mA
Max Frequency:
300 MHz
Max Operating Temperature:
150 C
Max Power Dissipation:
350 mW
Min Operating Temperature:
-65 C
Number of Elements:
1
Packaging:
Cut Tape
Polarity:
NPN
Termination:
SMD/SMT
Transition Frequency:
300 MHz
Voltage Rating (DC):
45 V
Height:
1 mm
Length:
3.05 mm
Width:
1.4 mm

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

High Frequency Low Noise NPN Bipolar Transistor for Precision Signal Amplification and Fast Switching

The BC847C 7 F NPN bipolar transistor is designed for low noise high gain signal amplification and fast switching in compact electronic circuits. With a collector emitter voltage rating of 45 volt and a continuous collector current of 100 milliampere it provides stable and predictable performance in analogue signal paths bias networks and high speed control stages. The SOT 23 3 surface mount package supports dense PCB layouts and reliable automated assembly.

This transistor is widely used in RF signal processing audio preamplifiers sensor signal conditioning and general purpose high speed switching applications. The C gain classification indicates higher DC current gain making it suitable for precision low level signals. Its high transition frequency of 300 megahertz enables clean and fast signal response in modern consumer electronics communication modules and industrial control systems.

Key Features

  • NPN Bipolar Transistor
    Designed for low noise signal amplification and fast switching
  • High Gain Class C
    Suitable for precision analogue and low level signal circuits
  • High Frequency Performance
    Supports signal operation up to 300 megahertz
  • Stable Voltage Rating
    Designed for circuits operating up to 45 volt
  • Compact SOT 23 3 Package
    Ideal for space constrained surface mount PCB designs