High-Performance Gate Driver Breakout Board for MOSFET and IGBT Power Switches: Maximise your power-switching efficiency today
The 7Semi UCC27516 Gate Driver Breakout Board is engineered for precision and reliability, making it an essential tool for driving MOSFET and IGBT power switches. Incorporating the UCC27516DRSR from Texas Instruments, this gate driver board offers a robust 4-A Peak-Source and 4-A Peak-Sink capability, ensuring superior performance in various power electronics applications. With its wide operating voltage range and ultra-fast switching characteristics, this board is ideal for demanding environments and applications requiring high efficiency and precision.
Key Features:
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Optimised Power Delivery: Achieves symmetrical 4-A Peak-Source and 4-A Peak-Sink drive current, providing efficient and reliable power switching.
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Ultra-Fast Switching: Experience minimal propagation delay with typical values as low as 13 ns, ensuring rapid and accurate switching operations.
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Versatile Voltage Range: Operates efficiently within a wide VDD range of 4.5 to 18 V, accommodating various power levels and application needs.
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Temperature Resilient: Designed to function across a broad temperature range of -40°C to 140°C, making it suitable for extreme environments.
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Enhanced Noise Immunity: Features hysteretic-logic thresholds for high-noise immunity, ensuring stable performance in electrically noisy environments.
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Glitch-Free Operation: Internal undervoltage lockout (UVLO) circuitry guarantees glitch-free operation during power up and power down.
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