High-Efficiency Dual-Channel Isolated Gate Driver for Power Systems: Take control of your power applications with the 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout.
The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout offers superior control and protection in high-power systems. Designed for use in power MOSFET, SiC, GaN, and IGBT transistors, this advanced driver enables efficient power conversion and enhanced performance. With features like a 3kVRMS isolation barrier, 4A peak-source and 6A peak-sink current, programmable dead time, and wide temperature compatibility, this gate driver breakout ensures reliability and precision across diverse applications.
Built for flexibility, the UCC21330 gate driver can function as dual low-side, dual high-side, or half-bridge drivers, offering maximum versatility for complex power designs. This driver also provides industry-leading CMTI of 125V/ns, making it suitable for challenging electrical environments.
Key Features:
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Flexible Configuration: Supports dual low-side, dual high-side, or half-bridge configurations for diverse power applications.
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High Current Capacity: 4A peak source and 6A peak sink output for powerful transistor control.
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Enhanced Protection: Integrated UVLO protection on all power supplies and programmable dead time for safe operation.
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Fast and Accurate Switching: 33ns typical propagation delay and 5ns maximum pulse-width distortion for precision timing.
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Robust CMTI Performance: Common-mode transient immunity greater than 125V/ns ensures reliable performance in high-noise environments.
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Fast Disable Logic: Quickly shut down both outputs simultaneously with the built-in disable feature.
