Maximize Power Efficiency and Reliability with the 7Semi UCC21220A Dual-Channel Isolated Gate Driver Breakout: Unlock the full potential of your MOSFETs and GaNFETs in demanding applications with unparalleled speed and safety.
The 7Semi UCC21220A Dual-Channel Isolated Gate Driver Breakout delivers best-in-class performance for power electronics, ensuring high efficiency and robust protection. Designed for industrial applications such as server power supplies, solar inverters, and wireless infrastructure, this breakout board integrates the UCC21220ADR gate driver, providing superior isolation, fast switching, and high common-mode transient immunity (CMTI) for optimal performance in any environment. The compact design allows for easy integration into systems requiring functional isolation, making it ideal for engineers working on next-generation power solutions.
Key Features:
- High Current Drive Strength: 4A peak-source, 6A peak-sink for driving MOSFETs and GaNFETs.
- Exceptional Propagation Delay: Maximum propagation delay of 40ns ensures high-speed operation.
- Precision Delay Matching: 5ns maximum delay matching ensures optimal performance in half-bridge configurations.
- Robust Ground Bounce Protection: Greater than 100V/ns CMTI for reliable operation in noisy environments.
- Integrated Protection: DIS pin, UVLO, and active pulldown provide enhanced safety and control.
- Versatile Configuration: Can be used as low-side, high-side, or half-bridge drivers with parallel output options for increased drive strength.
Applications:
