High-Performance Dual-Channel Isolated Gate Driver Breakout for Advanced Power Applications: Empower Your Designs with Fast Switching and Robust Protection
The 7Semi UCC21220 Dual-Channel Isolated Gate Driver Breakout offers a reliable, high-performance solution for driving power MOSFETs and GaNFETs in demanding applications like isolated DC/DC converters, PFC circuits, and synchronous rectifiers. With 3.0kVrms isolation, 4A peak source, and 6A peak sink output, this module provides robust protection and superior switching performance. Designed for high efficiency and power density, it features ultra-fast propagation delay, excellent delay matching, and advanced CMTI for enhanced system stability.
Key Features:
- Advanced Isolation: Supports basic and functional isolation for safer and more efficient power transfer.
- Superior Switching Performance: Maximum 40ns propagation delay, 5ns delay matching, and 5.5ns pulse-width distortion ensure faster, precise switching.
- High Output Capacity: 4A peak source and 6A peak sink outputs deliver reliable power handling for heavy load conditions.
- Robust Protection Mechanisms: Includes UVLO, active pulldown, and input transient rejection, ensuring safe and consistent performance in harsh environments.
- Versatile Configuration: Supports high-side, low-side, and half-bridge driver configurations, enabling flexibility in your designs.
Applications: Server power supplies, solar inverters, telecom brick converters, industrial transportation, robotics, and wireless infrastructure.
