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2N7002K-T1-GE3 - MOSFET N-Channel 60V 300mA SOT-23-3

Vishay Semiconductors

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SKU:
037-2N7002K-T1-GE3
MPN:
2N7002K-T1-GE3
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 5.85
10 - 99
₹ 5.26
100 - 999
₹ 4.97
1000 or above
₹ 4.68
2N7002K-T1-GE3 is a 60V, 300mA N-Channel TrenchFET MOSFET by Vishay featuring 2Ω RDS(on), 2V gate threshold, 25pF capacitance, and 25ns switching in a compact SOT-23-3 package. Ideal for logic-level, relay, and driver applications. View full description
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₹5.85 ex. GST
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Technical Specifications

Brand:
Vishay Semiconductors
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
300 mA
Current:
3 A
Drain To Source Breakdown Voltage:
60 V
Drain To Source Resistance:
2 Ohm
Drain to Source Voltage (Vdss):
60 V
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
30 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
350 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Nominal Vgs:
2 V
Number of Channels:
1
Resistance:
2 Ohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002K-T1-GE3 - N-Channel MOSFET | 60V, 300mA, 350mW | SOT-23-3 Package

The 2N7002K-T1-GE3 from Vishay Siliconix is a high-efficiency N-Channel enhancement mode TrenchFET power MOSFET designed for compact, low-voltage, and high-speed switching applications. With a drain-source voltage (V DS) of 60V, a continuous drain current of 300mA, and a power dissipation of 350mW, this MOSFET provides superior switching performance and excellent efficiency in a small SOT-23-3 package. Its low on-resistance (R DS(on)) of 2Ohm, low gate threshold (2V typical), and low input capacitance (25pF) enable direct logic-level drive from TTL or CMOS circuits, making it ideal for signal processing, load switching, and battery-powered systems.

Key Features

  • Type: N-Channel Enhancement Mode TrenchFET MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 300mA
  • Power Dissipation: Up to 350mW
  • Low On-Resistance: 2Ω (typical) for efficient power management and minimal conduction losses
  • Low Threshold Voltage: 2V (typical) for easy logic-level control
  • Low Input Capacitance: 25pF for reduced switching losses
  • Fast Switching Speed: 25ns switching time for high-frequency operation
  • Low Leakage Currents: Ensures stable performance and minimal power waste
  • ESD Protection: 2000V for improved reliability and ruggedness
  • Package Type: Compact and thermally efficient SOT-23-3 package
  • Environmental Compliance: RoHS compliant, lead-free, and halogen-free design